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| Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N190 / 3N191 FEATURES CORPORATION * Very High Input Impedance * High Gate Breakdown 3N190-3N191 * Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 1) 3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Transient Gate-Source Voltage (Note 1 and 2) . . . . . . . 125V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW Total Derating above 25oC. . . . . . . . . . . . . . . . . . 4.2mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TO-99 C 2506 D2 S2 G2 D1 S1 G1 ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC -55oC to +150oC 3N190-91 Hermetic TO-99 X3N190-91 Sorted Chips in Carriers ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL IGSSR IGSSF BVDSS BVSDS VGS(th) VGS IDSS ISDS rDS(on) ID(on) PARAMETER Gate Reverse Current Gate Forward Current Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Threshold Voltage Gate Source Voltage Zero Gate Voltage Drain Current Source Drain Current Drain-Source on Resistance On Drain Current -5.0 -40 -40 -2.0 -2.0 -3.0 -5.0 -5.0 -6.5 -200 -400 300 -30.0 ohms mA V 3N190/91 MIN MAX 10 -10 -25 ID = -10A IS = -10A, VBD = 0 VDS = -15V, ID = -10A VDS = VGS, I D = -10A VDS = -15V, ID = -500A VDS = -15V VSD = -15V, VDB = 0 VDS = -20V, ID = -100A VDS = -15V, VGS = -10V pA VGS = 40V VGS = -40V TA = +125oC UNITS TEST CONDITIONS 3N190 / 3N191 CORPORATION ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL gfs Yos Ciss Crss Coss PARAMETER Forward Transconductance (Note 3) Output Admittance Input Capacitance Output Shorted (Note 5) Reverse Transfer Capacitance (Note 5) Output Capacitance Input Shorted (Note 5) 3N190/91 MIN MAX 1500 4000 300 4.5 1.0 3.0 pF UNITS S VDS = -15V, ID = -10mA f = 1MHz TEST CONDITIONS f = 1kHz SWITCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL td(on) tr toff PARAMETER Turn On Delay Time Rise Time Turn Off Time MIN MAX 15 30 50 ns VDD = -15V, ID = -10mA, RG = RL = 1.4k (Note 5) UNITS TEST CONDITIONS MATCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) 3N188 and 3N190 SYMBOL Yfs1 / Yfs2 VGS1-2 VGS1-2 T VGS1-2 T NOTES: 1. 2. 3. 4. 5. PARAMETER Forward Transconductance Ratio Gate Source Threshold Voltage Differential Gate Source Threshold Voltage Differential Change with Temperature (Note 4) Gate Source Threshold Voltage Differential Change with Temperature (Note 4) Per transistor. Approximately doubles for every 10oC increase in TA. Pulse test duration = 300s; duty cycle 3%. Measured at end points, TA and TB. For design reference only, not 100% tested. MIN 0.85 MAX 1.0 100 100 100 mV V/ oC V/ oC UNITS TEST CONDITIONS VDS = -15V, ID = -500A, f = 1kHz VDS = -15V, ID = -500A VDS = -15V, ID = -500A, T = -55oC to +25 oC VDS = -15V, ID = -500A T = +25 oC to +125oC |
Price & Availability of 3N191
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